- 专利标题： SEMICONDUCTOR DEVICE WITH TRENCH ISOLATION STRUCTURES IN A TRANSITION REGION AND METHOD OF MANUFACTURING
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申请号： US18099358申请日： 2023-01-20
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公开(公告)号： US20230238459A1公开(公告)日： 2023-07-27
- 发明人: Lars Müller-Meskamp , Ralf Rudolf , Annett Winzer , Christian Schippel , Thomas Künzig , Dirk Priefert
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 优先权： EP 153674.1 2022.01.27
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/40 ; H01L21/762
摘要：
A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region having an inner region, an outer region on opposite sides of the inner region, and a transition region that laterally separates the inner region and the outer region. The electronic element includes a first doped region formed in the inner region and a second doped region formed in the outer region. The trench isolation structures are formed at least in the transition region. Each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.
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