公开(公告)号：US20230238459A1

公开(公告)日：2023-07-27

申请号：US18099358

申请日：2023-01-20

申请人： Infineon Technologies Austria AG

发明人： Lars Müller-Meskamp ,  Ralf Rudolf ,  Annett Winzer ,  Christian Schippel ,  Thomas Künzig ,  Dirk Priefert

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L21/762

CPC分类号： H01L29/7824 ,  H01L29/0653 ,  H01L29/402 ,  H01L29/7846 ,  H01L21/76283

摘要： A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region having an inner region, an outer region on opposite sides of the inner region, and a transition region that laterally separates the inner region and the outer region. The electronic element includes a first doped region formed in the inner region and a second doped region formed in the outer region. The trench isolation structures are formed at least in the transition region. Each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.

公开(公告)号：US20230261040A1

公开(公告)日：2023-08-17

申请号：US18110512

申请日：2023-02-16

申请人： Infineon Technologies Austria AG

发明人： Christian Schippel ,  Dirk Priefert ,  Felix Simon Winterer ,  Remigiusz Viktor Boguszewicz

IPC分类号： H01L29/06 ,  H01L27/02 ,  H01L27/06

CPC分类号： H01L29/0607 ,  H01L27/0255 ,  H01L27/0664 ,  H01L29/7322

摘要： A semiconductor device includes a substrate layer having a floating base region of a first conductivity type. A first well of a second conductivity type and the floating base region form a first pn junction. A first conductive structure is electrically connected to the first well. A barrier region of the second conductivity type and the floating base region form an auxiliary pn junction. A second conductive structure is electrically connected to the floating base region through a rectifying structure. A pull-down structure is configured to produce a voltage drop between the barrier region and the second conductive structure, when charge carriers cross the auxiliary pn junction.

公开(公告)号：US20230140348A1

公开(公告)日：2023-05-04

申请号：US17970675

申请日：2022-10-21

申请人： Infineon Technologies Austria AG

发明人： Lars Müller-Meskamp ,  Ralf Rudolf ,  Dirk Priefert ,  Annett Winzer ,  Thomas Künzig ,  Christian Schippel

IPC分类号： H01L27/12 ,  H01L29/06 ,  H01L21/762 ,  H01L29/78

摘要： A semiconductor device includes a semiconductor layer with an inner portion, an outer portion laterally surrounding the inner portion, and a transition portion laterally surrounding the inner portion and separating the inner portion and the outer portion. A first electric element includes a first doped region formed in the inner portion and a second doped region formed in the outer portion. The first electric element is configured to at least temporarily block a voltage applied between the first doped region and the second doped region. A trench isolation structure extends from a first surface into the semiconductor layer and segments at least one of the inner portion, the transition portion, and the outer portion.