公开(公告)号：US20230238459A1

公开(公告)日：2023-07-27

申请号：US18099358

申请日：2023-01-20

申请人： Infineon Technologies Austria AG

发明人： Lars Müller-Meskamp ,  Ralf Rudolf ,  Annett Winzer ,  Christian Schippel ,  Thomas Künzig ,  Dirk Priefert

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L21/762

CPC分类号： H01L29/7824 ,  H01L29/0653 ,  H01L29/402 ,  H01L29/7846 ,  H01L21/76283

摘要： A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region having an inner region, an outer region on opposite sides of the inner region, and a transition region that laterally separates the inner region and the outer region. The electronic element includes a first doped region formed in the inner region and a second doped region formed in the outer region. The trench isolation structures are formed at least in the transition region. Each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.

公开(公告)号：US20230140348A1

公开(公告)日：2023-05-04

申请号：US17970675

申请日：2022-10-21

申请人： Infineon Technologies Austria AG

发明人： Lars Müller-Meskamp ,  Ralf Rudolf ,  Dirk Priefert ,  Annett Winzer ,  Thomas Künzig ,  Christian Schippel

IPC分类号： H01L27/12 ,  H01L29/06 ,  H01L21/762 ,  H01L29/78

摘要： A semiconductor device includes a semiconductor layer with an inner portion, an outer portion laterally surrounding the inner portion, and a transition portion laterally surrounding the inner portion and separating the inner portion and the outer portion. A first electric element includes a first doped region formed in the inner portion and a second doped region formed in the outer portion. The first electric element is configured to at least temporarily block a voltage applied between the first doped region and the second doped region. A trench isolation structure extends from a first surface into the semiconductor layer and segments at least one of the inner portion, the transition portion, and the outer portion.

公开(公告)号：US20230411060A1

公开(公告)日：2023-12-21

申请号：US17844524

申请日：2022-06-20

申请人： Infineon Technologies Austria AG

发明人： Annett Winzer ,  Michael Kirsch ,  Lars Mueller-Meskamp

IPC分类号： H01F17/00 ,  H01F27/28

CPC分类号： H01F17/0013 ,  H01F27/2804 ,  H01F2027/2809

摘要： A semiconductor die includes: a semiconductor substrate; a transmitter or receiver circuit in the semiconductor substrate; a multi-layer stack on the semiconductor substrate, the multi-layer stack including a plurality of metallization layers separated from one another by an interlayer dielectric; and a transformer in the multi-layer stack and electrically coupled to the transmitter or receiver circuit. The transformer includes a first winding formed in a first metallization layer of the plurality of metallization layers and a second winding formed in a second metallization layer of the plurality of metallization layers. The first winding and the second winding are inductively coupled to one another. A magnetic material in the multi-layer stack is adjacent to at least part of the transformer.

公开(公告)号：US20240363699A1

公开(公告)日：2024-10-31

申请号：US18140253

申请日：2023-04-27

申请人： Infineon Technologies Austria AG

发明人： Annett Winzer ,  Lars Mueller-Meskamp ,  Tom Peterhaensel ,  Fabian Geisenhof ,  Torsten Helm ,  Dirk Manger

IPC分类号： H01L29/40

CPC分类号： H01L29/407 ,  H01L29/401

摘要： A semiconductor device includes: a semiconductor substrate having a first main surface and a second main surface opposite the first main surface; and a trench structure extending into the semiconductor substrate from the first main surface. The trench structure includes: an upper section extending into the semiconductor substrate from the first main surface; a lower section at an opposite end of the trench structure as the upper section; a first intermediary section between the upper section and the lower section; a field plate in the upper section and dielectrically insulated from the semiconductor substrate; and a first dielectric material completely filling the lower section. The lower section, the upper section, and the first intermediary section have different geometries and/or different dielectric materials. Methods of producing the semiconductor device are also described.

公开(公告)号：US20240290882A1

公开(公告)日：2024-08-29

申请号：US18113351

申请日：2023-02-23

申请人： Infineon Technologies Austria AG

发明人： Annett Winzer ,  Lars Mueller-Meskamp ,  Ralf Rudolf ,  Tom Peterhaensel ,  Birgit von Ehrenwall ,  Frido Erler ,  Dirk Manger

IPC分类号： H01L29/78 ,  H01L21/762

CPC分类号： H01L29/7816 ,  H01L21/76224

摘要： A semiconductor device includes: a silicon layer having a frontside and an electrically insulated backside; a first trench extending through the silicon layer from the frontside to the electrically insulated backside and laterally isolating a first region of the silicon layer; an electrically conductive material in the first trench; a dielectric material separating the electrically conductive material from silicon material of the silicon layer; and a plurality of silicon plugs laterally surrounded by the dielectric material and dividing the electrically conductive material into a plurality of separate segments in the first trench. Additional embodiments of semiconductor devices and methods for manufacturing the semiconductor devices are also described.