Invention Publication
- Patent Title: Semiconductor Device and Method of Manufacturing Same
-
Application No.: US18012359Application Date: 2021-10-08
-
Publication No.: US20230255038A1Publication Date: 2023-08-10
- Inventor: Junichi Takeya , Kazuyoshi Watanabe , Han Nozawa , Yuichi Ono
- Applicant: The University of Tokyo , PI-CRYSTAL INC. , ORGANO-CIRCUIT INC.
- Applicant Address: JP Tokyo
- Assignee: The University of Tokyo,PI-CRYSTAL INC.,ORGANO-CIRCUIT INC.
- Current Assignee: The University of Tokyo,PI-CRYSTAL INC.,ORGANO-CIRCUIT INC.
- Current Assignee Address: JP Tokyo; JP Chiba; JP Kashiwa-shi, Chiba
- Priority: JP 20181861 2020.10.29
- International Application: PCT/JP2021/037266 2021.10.08
- Date entered country: 2022-12-22
- Main IPC: H10K10/46
- IPC: H10K10/46 ; H10K77/10 ; H10K71/13 ; H01L23/14 ; H01L23/528

Abstract:
Provided is a semiconductor device and a method of manufacturing the semiconductor device that is capable of improving the connection reliability between an electronic element and a substrate in a semiconductor device in which the electronic element is fixed to the substrate. The semiconductor device includes: a substrate 10 provided with wirings and wiring connection parts 12 connected to the wirings; electronic elements 20, 30, 40, and 50 electrically connected to the wiring connection parts 12 and fixed to the substrate; and a resin film 60 laminated on one surface of the substrate 10, conforming to the shapes of the electronic elements 20, 30, 40, and 50, and covering the electronic elements 20, 30, 40, and 50.
Information query