- 专利标题: MOS TRANSISTOR ON SOI STRUCTURE
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申请号: US18118391申请日: 2023-03-07
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公开(公告)号: US20230290786A1公开(公告)日: 2023-09-14
- 发明人: Sebastien CREMER , Frederic MONSIEUR , Alain FLEURY , Sebastien HAENDLER
- 申请人: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
- 申请人地址: FR Crolles
- 专利权人: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- 当前专利权人: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- 当前专利权人地址: FR Crolles; FR Montrouge
- 优先权: FR 02143 2022.03.11
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/762 ; H01L23/48 ; H01L23/528 ; H01L23/532
摘要:
A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.
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