公开(公告)号：US20240186090A1

公开(公告)日：2024-06-06

申请号：US18193230

申请日：2023-03-30

Applicant: STMICROELECTRONICS SA ,  STMicroelectronics (Crolles 2) SAS ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Philippe CATHELIN ,  Frederic GIANESELLO ,  Alain FLEURY ,  Stephane MONFRAY ,  Bruno REIG ,  Vincent PUYAL

IPC: H01H37/34 ,  H10N70/00 ,  H10N70/20

CPC classification number: H01H37/34 ,  H10N70/231 ,  H10N70/826 ,  H10N70/8413 ,  H10N70/882

Abstract: The present description concerns a switch based on a phase-change material comprising: first, second, and third electrodes; a first region of said phase-change material coupling the first and second electrodes; and —a second region of said phase-change material coupling the second and third electrodes.

公开(公告)号：US20240023465A1

公开(公告)日：2024-01-18

申请号：US18186109

申请日：2023-03-17

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Bruno REIG ,  Vincent PUYAL ,  Stephane MONFRAY ,  Alain FLEURY ,  Philippe CATHELIN

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/823 ,  H10N70/231 ,  H10N70/8413 ,  H10N70/011

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

公开(公告)号：US20230290786A1

公开(公告)日：2023-09-14

申请号：US18118391

申请日：2023-03-07

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Sebastien CREMER ,  Frederic MONSIEUR ,  Alain FLEURY ,  Sebastien HAENDLER

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/1203 ,  H01L21/76264 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53257

Abstract: A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.

公开(公告)号：US20240023468A1

公开(公告)日：2024-01-18

申请号：US18190901

申请日：2023-03-27

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMicroelectronics (Crolles 2) SAS ,  STMICROELECTRONICS SA

Inventor： Alain FLEURY ,  Stephane MONFRAY ,  Philippe CATHELIN ,  Bruno REIG ,  Vincent PUYAL

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/8613 ,  H10N70/231 ,  H10N70/253 ,  H10N70/841 ,  H10N70/8828

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

公开(公告)号：US20220359435A1

公开(公告)日：2022-11-10

申请号：US17733589

申请日：2022-04-29

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics International N.V.

Inventor： Stephane MONFRAY ,  Siddhartha DHAR ,  Alain FLEURY

IPC: H01L23/66 ,  H01L23/373 ,  H01L23/42 ,  H01L21/48

Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

公开(公告)号：US20240023467A1

公开(公告)日：2024-01-18

申请号：US18186103

申请日：2023-03-17

Applicant: STMicroelectronics (Crolles 2) SAS ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Stephane MONFRAY ,  Alain FLEURY ,  Bruno REIG

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/861 ,  H10N70/231 ,  H10N70/823 ,  H10N70/063 ,  H10N70/8828

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

公开(公告)号：US20230378295A1

公开(公告)日：2023-11-23

申请号：US18197909

申请日：2023-05-16

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Siddhartha DHAR ,  Stephane MONFRAY ,  Alain FLEURY ,  Franck JULIEN

IPC: H01L29/423 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/40

CPC classification number: H01L29/42368 ,  H01L27/088 ,  H01L21/823462 ,  H01L29/401

Abstract: A transistor includes a semiconductor layer with a stack of a gate insulator and a conductive gate on the semiconductor layer. A thickness of the gate insulator is variable in a length direction of the transistor. The gate insulator includes a first region having a first thickness below a central region of the conductive gate. The gate insulator further includes a second region having a second thickness, greater than the first thickness, below an edge region of conductive gate.