- 专利标题： HOLE-TRANSPORT LAYER MATERIAL, ELECTRON-BLOCKING LAYER MATERIAL, ELECTRON-TRANSPORT LAYER MATERIAL, HOLEBLOCKING LAYER MATERIAL, LIGHT-EMITTING DEVICE, LIGHTEMITTING APPARATUS, ELECTRONIC DEVICE, AND LIGHTING DEVICE
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申请号： US17739260申请日： 2022-05-09
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公开(公告)号： US20230029353A1公开(公告)日： 2023-01-26
- 发明人: Takeyoshi WATABE , Hiromi SEO , Airi UEDA , Yuta KAWANO , Tomohiro KUBOTA , Yasushi KITANO , Takao TOSU , Nobuharu OHSAWA , Satoshi SEO
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2021-081940 20210513
- 主分类号： H01L51/50
- IPC分类号： H01L51/50 ; C07C211/45 ; H01L51/42
摘要：
An organic semiconductor device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-transport layer and alight-emitting layer. The hole-transport layer is positioned between the anode and the light-emitting layer. The hole-transport layer is not in contact with the anode. The hole-transport layer includes a transport layer material for a light-emitting device and the GSP_slope that is a potential gradient of a surface potential of an evaporated film of the material is higher than or equal to 20 (mV/nm).
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