Invention Publication
- Patent Title: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17697418Application Date: 2022-03-17
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Publication No.: US20230298889A1Publication Date: 2023-09-21
- Inventor: Shibun TSUDA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/762 ; H01L21/3105 ; H01L21/02

Abstract:
After a plurality of trenches is formed in an SOI substrate, a side surface of the insulating layer is retreated from a side surface of the semiconductor layer and a side surface of the semiconductor substrate. Next, the side surface of the insulating layer is covered with an organic film and also the side surface of the semiconductor layer is exposed from the organic film by performing an anisotropic etching process to the organic film embedded into an inside of each of the plurality of trenches. Next, each of the side surface of the semiconductor layer and the side surface of the semiconductor substrate is approached to the side surface of the insulating layer by performing an isotropic etching process. Further, after the organic film is removed, an oxidation treatment is performed to each of the side surface of the semiconductor layer and the side surface of the semiconductor substrate.
Public/Granted literature
- US12125703B2 Method of manufacturing semiconductor device Public/Granted day:2024-10-22
Information query
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