- 专利标题: STACKED DEVICE WITH BACKSIDE POWER DISTRIBUTION NETWORK AND METHOD OF MANUFACTURING THE SAME
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申请号: US17739717申请日: 2022-05-09
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公开(公告)号: US20230307364A1公开(公告)日: 2023-09-28
- 发明人: Saehan Park , Seungyoung Lee , Inchan Hwang
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L27/092 ; H01L21/822 ; H01L21/8238 ; H01L21/78
摘要:
A semiconductor device including a wafer, a first semiconductor device and a second semiconductor device on a front side of the wafer, power rails on a back side of the wafer, a backside power distribution network (PDN) grid on the back side of the wafer, and front-side signal routing lines above the first and second semiconductor devices on the front side of the wafer. The second semiconductor device is stacked on the first semiconductor device, the backside PDN grid is coupled to the power rails, and the power rails are coupled to the first and second semiconductor devices.
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