公开(公告)号：US20230335549A1

公开(公告)日：2023-10-19

申请号：US17866343

申请日：2022-07-15

申请人： Samsung Electronics Co., Ltd.

发明人： Inchan Hwang ,  Jaejik Baek ,  Byounghak Hong ,  Saehan Park ,  Kang-ill Seo

IPC分类号： H01L21/822 ,  H01L29/66 ,  H01L27/06

CPC分类号： H01L27/0688 ,  H01L21/8221 ,  H01L29/66545 ,  H01L29/6656

摘要： An integrated circuit includes a first semiconductor device and a second semiconductor device adjacent to the first semiconductor device. Each of the first and second semiconductor devices includes a lower transistor and an upper transistor on the lower transistor, and the upper and lower transistors each include a source region, a drain region, and a channel region extending between the source region and the drain region. The integrated circuit also includes a first dielectric spacer extending along an inner sidewall of the channel region of the upper and/or lower transistor of the first semiconductor device, a second dielectric spacer facing the first dielectric spacer and extending along an inner sidewall of the channel region of the upper and/or lower transistor of the second semiconductor device. The integrated circuit also includes an interconnect contact between the first semiconductor device and the second semiconductor device.

公开(公告)号：US11881455B2

公开(公告)日：2024-01-23

申请号：US17389622

申请日：2021-07-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Saehan Park ,  Hoonseok Seo ,  Gil Hwan Son ,  Byounghak Hong ,  Kang Ill Seo

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L21/822 ,  H01L23/48 ,  H01L27/06 ,  H01L23/532 ,  H01L21/8234 ,  H01L23/535 ,  H01L23/485

CPC分类号： H01L23/5286 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/481 ,  H01L27/0694 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257

摘要： Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.

公开(公告)号：US20220336473A1

公开(公告)日：2022-10-20

申请号：US17382060

申请日：2021-07-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byounghak Hong ,  Seunghyun Song ,  Saehan Park ,  Seungyoung Lee ,  Inchan Hwang

IPC分类号： H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L21/762

摘要： A multi-stack semiconductor device includes: a plurality of lower transistor structures arranged on a lower stack and including a plurality of lower fin structures surrounded by a plurality of lower gate structures, respectively; a plurality of upper transistor structures arranged on an upper stack and including a plurality of upper fin structures surrounded by a plurality of upper gate structures, respectively; and at least one of a lower diffusion break structure on the lower stack and a upper diffusion break structure on the upper stack, wherein the lower diffusion break structure is formed between two adjacent lower gate structures, and isolates two lower transistor structures respectively including the two adjacent lower gate structures from each other, and the upper diffusion break structure is formed between two adjacent upper gate structures, and isolates two upper transistor structures respectively including the two adjacent upper gate structures from each other.

公开(公告)号：US20230352407A1

公开(公告)日：2023-11-02

申请号：US17853867

申请日：2022-06-29

申请人： Samsung Electronics Co., Ltd.

发明人： Saehan Park ,  Seungyoung Lee ,  Kang-ill Seo

IPC分类号： H01L23/498 ,  H01L23/528 ,  H01L23/535 ,  H01L21/8238 ,  H01L21/768

CPC分类号： H01L23/5286 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/49822 ,  H01L23/535

摘要： Provided is a system for routing connections to a logic circuit, the system including a first wafer having a backside and a frontside opposite the backside, a power conductor at the backside of the first wafer, a core at the frontside of the first wafer, a power via electrically connected to the power conductor and to the core, a signal pad at the backside of the first wafer, a first frontside signal-routing metal at the frontside of the first wafer, and a signal via connected to the signal pad and the first frontside signal-routing metal.

公开(公告)号：US20230307364A1

公开(公告)日：2023-09-28

申请号：US17739717

申请日：2022-05-09

申请人： Samsung Electronics Co., Ltd.

发明人： Saehan Park ,  Seungyoung Lee ,  Inchan Hwang

IPC分类号： H01L23/528 ,  H01L27/092 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/78

CPC分类号： H01L23/5286 ,  H01L27/0922 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/7806

摘要： A semiconductor device including a wafer, a first semiconductor device and a second semiconductor device on a front side of the wafer, power rails on a back side of the wafer, a backside power distribution network (PDN) grid on the back side of the wafer, and front-side signal routing lines above the first and second semiconductor devices on the front side of the wafer. The second semiconductor device is stacked on the first semiconductor device, the backside PDN grid is coupled to the power rails, and the power rails are coupled to the first and second semiconductor devices.

公开(公告)号：US12131996B2

公开(公告)日：2024-10-29

申请号：US17739717

申请日：2022-05-09

申请人： Samsung Electronics Co., Ltd.

发明人： Saehan Park ,  Seungyoung Lee ,  Inchan Hwang

IPC分类号： H01L23/528 ,  H01L21/78 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L23/5286 ,  H01L21/7806 ,  H01L21/8221 ,  H01L21/823871 ,  H01L27/0922

摘要： A semiconductor device including a wafer, a first semiconductor device and a second semiconductor device on a front side of the wafer, power rails on a back side of the wafer, a backside power distribution network (PDN) grid on the back side of the wafer, and front-side signal routing lines above the first and second semiconductor devices on the front side of the wafer. The second semiconductor device is stacked on the first semiconductor device, the backside PDN grid is coupled to the power rails, and the power rails are coupled to the first and second semiconductor devices.

公开(公告)号：US12125788B2

公开(公告)日：2024-10-22

申请号：US18386497

申请日：2023-11-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Saehan Park ,  Hoonseok Seo ,  Gil Hwan Son ,  Byounghak Hong ,  Kang Ill Seo

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/48 ,  H01L23/498 ,  H01L23/532 ,  H01L27/06

CPC分类号： H01L23/5286 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/481 ,  H01L27/0694 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257

摘要： Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.

公开(公告)号：US20220157723A1

公开(公告)日：2022-05-19

申请号：US17159972

申请日：2021-01-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Saehan Park ,  Hoonseok Seo ,  Jeonghyuk Yim ,  Ki-il Kim ,  Gil Hwan Son

IPC分类号： H01L23/528 ,  H01L27/06 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L21/822

摘要： Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

公开(公告)号：US11769728B2

公开(公告)日：2023-09-26

申请号：US17159972

申请日：2021-01-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Saehan Park ,  Hoonseok Seo ,  Jeonghyuk Yim ,  Ki-il Kim ,  Gil Hwan Son

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L21/822 ,  H01L23/48 ,  H01L23/00 ,  H01L27/06

CPC分类号： H01L23/5286 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/481 ,  H01L24/05 ,  H01L27/0694 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05176

摘要： Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

公开(公告)号：US20230275021A1

公开(公告)日：2023-08-31

申请号：US17738393

申请日：2022-05-06

申请人： Samsung Electronics Co., Ltd.

发明人： BYOUNGHAK HONG ,  Jeonghyuk Yim ,  Inchan Hwang ,  Gilhwan Son ,  Seungyoung Lee ,  Saehan Park ,  Janggeun Lee ,  Myunghoon Jung ,  Seungchan Yun ,  Buhyun Ham ,  Kang-ILL Seo

IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L21/302 ,  H01L21/8234

CPC分类号： H01L23/5286 ,  H01L23/5283 ,  H01L23/5226 ,  H01L21/302 ,  H01L21/823475

摘要： Integrated circuit devices may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each of the passive device and the power rail may have a first surface facing the substrate, and the first surface of the passive device is closer than the first surface of the power rail to the substrate.