- 专利标题: CAPACITOR STRING STRUCTURE, MEMORY DEVICE AND ELECTRONIC DEVICE
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申请号: US17709174申请日: 2022-03-30
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公开(公告)号: US20230317121A1公开(公告)日: 2023-10-05
- 发明人: Chung-Kuang Chen , Tzeng-Huei Shiau
- 申请人: MACRONIX International Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX International Co., Ltd.
- 当前专利权人: MACRONIX International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C5/06 ; H01L23/522 ; H01L23/528
摘要:
A capacitor string structure, a memory device and a charge pump circuit thereof are provided. The capacitor string structure includes a plurality of conductive plates. The conductive plates are disposed in the memory device. The conductive plates are stacked to each other, and respectively form a plurality of word lines of the memory device, where two neighbored conductive plates form a capacitor.
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