发明公开
- 专利标题： FERROELECTRIC MEMORY DEVICE
-
申请号： US18357153申请日： 2023-07-23
-
公开(公告)号： US20230371274A1公开(公告)日： 2023-11-16
- 发明人: Han-Jong Chia
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H10B53/30
- IPC分类号： H10B53/30 ; H01L29/66 ; H01L21/28 ; H01L21/3115 ; H01L29/78 ; H10B51/30
摘要：
A ferroelectric memory device includes a first conductive region, a second conductive region and a ferroelectric structure. The second conductive region is disposed over the first conductive region. The ferroelectric structure includes a plurality of different ferroelectric materials stacked between the first conductive region and the second conductive region.
信息查询
