- 专利标题： GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE
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申请号： US17824690申请日： 2022-05-25
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公开(公告)号： US20230387251A1公开(公告)日： 2023-11-30
- 发明人: Tien-Shun CHANG , Kuo-Ju CHEN , Sih-Jie LIU , Wei-Fu WANG , Yi-Chao WANG , Li-Ting WANG , Su-Hao LIU , Huicheng CHANG , Yee-Chia YEO
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L21/265
摘要：
A method for manufacturing a semiconductor device includes: forming a patterned structure on a substrate, the patterned structure including a dielectric layer and a dummy gate structure disposed in the dielectric layer; and subjecting the patterned structure to an ion implantation process so as to modulate a profile of the dummy gate structure.
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