公开(公告)号：US20230387251A1

公开(公告)日：2023-11-30

申请号：US17824690

申请日：2022-05-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tien-Shun CHANG ,  Kuo-Ju CHEN ,  Sih-Jie LIU ,  Wei-Fu WANG ,  Yi-Chao WANG ,  Li-Ting WANG ,  Su-Hao LIU ,  Huicheng CHANG ,  Yee-Chia YEO

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/66545 ,  H01L29/66795 ,  H01L29/7851 ,  H01L21/265

摘要： A method for manufacturing a semiconductor device includes: forming a patterned structure on a substrate, the patterned structure including a dielectric layer and a dummy gate structure disposed in the dielectric layer; and subjecting the patterned structure to an ion implantation process so as to modulate a profile of the dummy gate structure.