Invention Publication
- Patent Title: MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT
-
Application No.: US17971775Application Date: 2022-10-24
-
Publication No.: US20230389444A1Publication Date: 2023-11-30
- Inventor: Tomoyuki SASAKI , Zhenyao TANG
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: WO TJP2022021362 2022.05.25 WO TJP2022021656 2022.05.26
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/10 ; H01L43/12

Abstract:
A magneto-resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a first central region, and a first outer circumferential region disposed on an outer side of the first central region. A maximum thickness of the first outer circumferential region is greater than an average thickness of the first central region.
Information query
IPC分类: