发明公开
- 专利标题： CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES
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申请号： US18452581申请日： 2023-08-21
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公开(公告)号： US20230402534A1公开(公告)日： 2023-12-14
- 发明人: Ching-Hua Lee , Miao-Syuan Fan , Ta-Hsiang Kung , Jung-Wei Lee
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US17400076 2021.08.11
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/06 ; H01L29/24 ; H01L29/66 ; H01L29/786 ; H01L21/02 ; H01L29/423 ; H01L29/16
摘要：
A semiconductor device includes a substrate, a semiconductor structure suspending over the substrate and comprising a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a doped two-dimensional (2D) material layer comprising a first portion on an upper surface of the channel region. The semiconductor device also includes an interfacial layer surrounding the channel region including the first portion of the doped 2D material layer, and a gate electrode surrounding the interfacial layer.
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