公开(公告)号：US12100755B2

公开(公告)日：2024-09-24

申请号：US17400076

申请日：2021-08-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Hua Lee ,  Miao-Syuan Fan ,  Ta-Hsiang Kung ,  Jung-Wei Lee

IPC分类号： H01L29/00 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/76 ,  H01L29/786

CPC分类号： H01L29/7606 ,  H01L21/02568 ,  H01L21/0259 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device includes a substrate, a semiconductor structure suspending over the substrate and comprising a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a doped two-dimensional (2D) material layer comprising a first portion on an upper surface of the channel region. The semiconductor device also includes an interfacial layer surrounding the channel region including the first portion of the doped 2D material layer, and a gate electrode surrounding the interfacial layer.

公开(公告)号：US20230402534A1

公开(公告)日：2023-12-14

申请号：US18452581

申请日：2023-08-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Hua Lee ,  Miao-Syuan Fan ,  Ta-Hsiang Kung ,  Jung-Wei Lee

IPC分类号： H01L29/76 ,  H01L29/06 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/16

CPC分类号： H01L29/7606 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H01L21/0259 ,  H01L21/02568 ,  H01L29/42392 ,  H01L29/0673 ,  H01L29/1606

摘要： A semiconductor device includes a substrate, a semiconductor structure suspending over the substrate and comprising a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a doped two-dimensional (2D) material layer comprising a first portion on an upper surface of the channel region. The semiconductor device also includes an interfacial layer surrounding the channel region including the first portion of the doped 2D material layer, and a gate electrode surrounding the interfacial layer.

公开(公告)号：US20220328670A1

公开(公告)日：2022-10-13

申请号：US17400076

申请日：2021-08-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Hua Lee ,  Miao-Syuan Fan ,  Ta-Hsiang Kung ,  Jung-Wei Lee

IPC分类号： H01L29/76 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

摘要： A semiconductor device includes a substrate, a semiconductor structure suspending over the substrate and comprising a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a doped two-dimensional (2D) material layer comprising a first portion on an upper surface of the channel region. The semiconductor device also includes an interfacial layer surrounding the channel region including the first portion of the doped 2D material layer, and and a gate electrode surrounding the interfacial layer.