- 专利标题: METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
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申请号: US18447614申请日: 2023-08-10
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公开(公告)号: US20230403868A1公开(公告)日: 2023-12-14
- 发明人: Jerry Chang Jui KAO , Meng-Kai HSU , Chin-Shen LIN , Ming-Tao YU , Tzu-Ying LIN , Chung-Hsing WANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US17140441 2021.01.04
- 主分类号: H10K19/10
- IPC分类号: H10K19/10 ; H10K19/00
摘要:
A method includes forming a circuit region over a substrate. The circuit region includes at least one active region extending along a first direction, and at least one gate region extending across the at least one active region and along a second direction transverse to the first direction. At least one first input/output (TO) pattern and at least one second TO pattern are correspondingly formed in different first and second metal layers to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first TO pattern extends along a third direction oblique to both the first direction and the second direction. The at least one second TO pattern extends along a fourth direction oblique to both the first direction and the second direction, the fourth direction transverse to the third direction.
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