A method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate lower in rigidity than the first substrate to a first principal surface, on which the first structure is formed, of the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The second substrate is removed from the second bonded body. A third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the second substrate is removed, of the second bonded body. The supporting substrate is removed from the third bonded body.