A device includes a substrate, a contact, a first gate, a second gate, a dielectric feature between the gates, a via, and a conductive line. The gates are each adjacent the contact and aligned lengthwise with each other along a first direction. A first sidewall of the dielectric feature defines an end-wall of the first gate. A second sidewall of the dielectric feature defines an end-wall of the second gate. The conductive line extends along a second direction. A projection of the conductive line onto a top surface of the dielectric feature passes between the first and second sidewalls. The via interfaces with the contact along a second plane. The via has a first dimension on the second plane along the second direction; the contact has a second dimension on the second plane along the second direction. The first dimension is greater than the second dimension.