- 专利标题: INTEGRATED CIRCUIT STRUCTURE
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申请号: US17459697申请日: 2021-08-27
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公开(公告)号: US20230064223A1公开(公告)日: 2023-03-02
- 发明人: Te-Hsin Chiu , Shih-Wei Peng , Wei-Cheng Lin , Jiann-Tyng Tzeng
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L23/528 ; H01L27/02 ; H01L21/768
摘要:
An integrated circuit structure is disclosed, including a gate, a first conductive line and a pair of second conductive lines, and a first feed-through via. The gate is disposed on a front side of the integrated circuit structure and extends in a first direction on a first side of a dielectric layer. The first conductive line and a pair of second conductive lines are disposed on a second side, opposite of the first side, of the dielectric layer and on a back side, opposite of the front side, of the integrated circuit structure. The first conductive line is interposed between the pair of second conductive lines in a layout view. The first feed-through via extends through the dielectric layer in a second direction different from the first direction. The first feed-through via couples the gate to the first conductive line.
公开/授权文献
- US12021021B2 Integrated circuit structure 公开/授权日:2024-06-25
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