- 专利标题: SELF-HEALING MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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申请号: US17893251申请日: 2022-08-23
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公开(公告)号: US20230072894A1公开(公告)日: 2023-03-09
- 发明人: Tae Whan KIM , Young Jin Kim , Hao Qun An
- 申请人: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 申请人地址: KR Seoul
- 专利权人: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 当前专利权人: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 当前专利权人地址: KR Seoul
- 优先权: KR10-2021-0119747 20210908
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/112 ; H01L27/24
摘要:
Disclosed are a self-healing memory device including a lower electrode; a polymer nanocomposite layer formed on the lower electrode, wherein, when a structural defect occurs, the polymer nanocomposite layer repairs the structural defect and restores a memory function damaged due to the structural defect through a self-healing mechanism characterized by movement of a polymer material and hydrogen bonding; and an upper electrode formed on the polymer nanocomposite layer and a method of manufacturing the self-healing memory device.
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