公开(公告)号：US20230072894A1

公开(公告)日：2023-03-09

申请号：US17893251

申请日：2022-08-23

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Tae Whan KIM ,  Young Jin Kim ,  Hao Qun An

IPC分类号： H01L45/00 ,  H01L27/112 ,  H01L27/24

摘要： Disclosed are a self-healing memory device including a lower electrode; a polymer nanocomposite layer formed on the lower electrode, wherein, when a structural defect occurs, the polymer nanocomposite layer repairs the structural defect and restores a memory function damaged due to the structural defect through a self-healing mechanism characterized by movement of a polymer material and hydrogen bonding; and an upper electrode formed on the polymer nanocomposite layer and a method of manufacturing the self-healing memory device.