Invention Application
- Patent Title: Light-Emitting Device
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Application No.: US17987188Application Date: 2022-11-15
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Publication No.: US20230079236A1Publication Date: 2023-03-16
- Inventor: Shunpei YAMAZAKI , Satoshi SEO , Nobuharu OHSAWA , Satoko SHITAGAKI , Hideko INOUE , Hiroshi KADOMA , Harue OSAKA , Kunihiko SUZUKI , Yasuhiko TAKEMURA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Priority: JP2011-042120 20110228,JP2011-042122 20110228
- Main IPC: H01L51/00
- IPC: H01L51/00

Abstract:
A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
Public/Granted literature
- US12108658B2 Light-emitting device Public/Granted day:2024-10-01
Information query
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