发明申请
- 专利标题： SEMICONDUCTOR DEVICE, CIRCUIT BOARD STRUCTURE AND MANUFACTURING METHOD THEREOF
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申请号： US18086545申请日： 2022-12-21
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公开(公告)号： US20230120191A1公开(公告)日： 2023-04-20
- 发明人: Tin-Hao Kuo , Chen-Hua Yu , Chung-Shi Liu , Hao-Yi Tsai , Yu-Chia Lai , Po-Yuan Teng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L23/538 ; H01L23/00 ; H01L23/31 ; H05K1/02 ; H01L25/00
摘要：
A semiconductor device, a circuit board structure and a manufacturing forming thereof are provided. A circuit board structure includes a core layer, a first build-up layer and a second build-up layer. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The circuit board structure has a plurality of stress releasing trenches extending into the first build-up layer and the second build-up layer.
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