- 专利标题: HALL SENSOR WITH DIELECTRIC ISOLATION AND P-N JUNCTION ISOLATION
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申请号: US17508706申请日: 2021-10-22
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公开(公告)号: US20230129179A1公开(公告)日: 2023-04-27
- 发明人: Keith Ryan Green , Erika Lynn Mazotti , William David French , Ricky Alan Jackson
- 申请人: Texas Instruments Incorporated
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: G01R33/07
- IPC分类号: G01R33/07 ; H01L43/14 ; H01L43/06 ; H01L43/04 ; G01R33/00
摘要:
A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.
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