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公开(公告)号：US20230129179A1
公开(公告)日：2023-04-27
申请号：US17508706
申请日：2021-10-22
摘要： A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.
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公开(公告)号：US20200075573A1
公开(公告)日：2020-03-05
申请号：US16547615
申请日：2019-08-22
IPC分类号： H01L27/00 , H01L23/525
摘要： An electronic device, e.g. a trimmable resistor, includes a plurality of fused resistors, each fused resistor including one or more doped resistive regions formed in a semiconductor substrate. The doped resistive regions may be thermistors. Each fused resistor further includes a corresponding one of a plurality of fusible links. A first terminal of each of the fused resistors is connected to a first terminal of the corresponding fusible link. First and second interconnection buses are located over the substrate, with the first interconnection bus connecting to a second terminal of each of the fused resistors, and the second interconnection bus connecting to a second terminal of each of the fusible links. The plurality of fused resistors have resistance values that form an exponential progression.
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3.发明申请公开(公告)号：US20170343622A1
公开(公告)日：2017-11-30
申请号：US15169639
申请日：2016-05-31
发明人： Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
CPC分类号： G01R33/04 , G01R33/0052
摘要： An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
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4.发明申请公开(公告)号：US20210217706A1
公开(公告)日：2021-07-15
申请号：US17011982
申请日：2020-09-03
摘要： An example apparatus includes a semiconductor wafer with a plurality of probe pads each formed centered in scribe streets and intersected by saw kerf lanes. Each probe pad includes a plurality of lower level conductor layers arranged in lower level conductor frames, a plurality of lower level vias extending vertically through lower level insulator layers and electrically coupling the lower level conductor frames; a plurality of upper level conductor layers, each forming two portions on two outer edges of the probe pad, the two portions aligned with, spaced from, and on opposite sides of the saw kerf lane, the coverage of the upper level conductor layers being less than about twenty percent; and a plurality of upper level vias extending vertically through upper level insulator layers and coupling the upper level conductor layers electrically to one another and to the lower level conductor layers. Methods are disclosed.
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公开(公告)号：US20170316875A1
公开(公告)日：2017-11-02
申请号：US15399937
申请日：2017-01-06
IPC分类号： H01F27/34 , H01L43/02 , H01L27/22 , H01L23/522 , G01R33/00 , H01F27/28 , H01F27/24 , G01R33/04 , H01L43/12 , H01L23/528
CPC分类号： H01F27/346 , G01R33/0029 , G01R33/04 , H01F27/24 , H01F27/28 , H01L23/5226 , H01L23/528 , H01L27/22 , H01L43/02 , H01L43/12
摘要： An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
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公开(公告)号：US09748181B1
公开(公告)日：2017-08-29
申请号：US15168479
申请日：2016-05-31
IPC分类号： H01L23/544 , H01L23/00 , H01L21/78 , H01L23/31 , H01L23/528 , H01L23/532
CPC分类号： H01L23/562 , H01L23/3171 , H01L23/528 , H01L23/53261 , H01L23/53266 , H01L23/585
摘要： An example apparatus includes a plurality of scribe streets arranged in rows and columns on the surface of a semiconductor wafer; and a plurality of integrated circuit dies arranged in rows and columns and spaced apart by the scribe streets. Each integrated circuit die includes plurality of active areas; a plurality of insulator layers overlying the active areas; a plurality of conductor layers interspersed with and separated by ones of the insulator layers; and a passivation layer overlying a top portion of the uppermost one of the conductor layers. A scribe seal in a scribe region surrounds the periphery of the integrated circuit dies, the scribe seal covered by the passivation layer; and a crack arrest structure is located surrounding and spaced from the scribe seal, and including an opening in the passivation layer that extends to and exposes the upper surface of the crack arrest structure. Methods are disclosed.
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公开(公告)号：US09577185B1
公开(公告)日：2017-02-21
申请号：US15141003
申请日：2016-04-28
IPC分类号： H01L27/02 , H01L43/12 , H01L27/22 , H01L43/02 , H01L23/528 , H01L23/522 , G01R33/04
CPC分类号： H01F27/346 , G01R33/0029 , G01R33/04 , H01F27/24 , H01F27/28 , H01L23/5226 , H01L23/528 , H01L27/22 , H01L43/02 , H01L43/12
摘要： An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
摘要翻译： 集成磁通门装置，其包括磁芯，励磁线圈和感测线圈。 磁芯具有纵向边缘和末端边缘。 励磁线圈围绕磁芯的纵向边缘缠绕，并且励磁线圈在端子边缘附近具有第一数量的励磁线圈构件。 感测线圈围绕磁芯的纵向边缘缠绕，并且感测线圈在端子边缘附近具有第二数量的感测线圈构件。 为了减小磁通门噪声，第二数量的感测线圈构件可以小于在端子边缘附近的第一数量的励磁线圈构件。
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公开(公告)号：US20210343694A1
公开(公告)日：2021-11-04
申请号：US17376747
申请日：2021-07-15
IPC分类号： H01L27/00 , H01L23/525 , H01L27/08
摘要： An electronic device, e.g. a trimmable resistor, includes a plurality of fused resistors, each fused resistor including one or more doped resistive regions formed in a semiconductor substrate. The doped resistive regions may be thermistors. Each fused resistor further includes a corresponding one of a plurality of fusible links. A first terminal of each of the fused resistors is connected to a first terminal of the corresponding fusible link. First and second interconnection buses are located over the substrate, with the first interconnection bus connecting to a second terminal of each of the fused resistors, and the second interconnection bus connecting to a second terminal of each of the fusible links. The plurality of fused resistors have resistance values that form an exponential progression.
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公开(公告)号：US11004929B2
公开(公告)日：2021-05-11
申请号：US16596972
申请日：2019-10-09
发明人： Dok Won Lee , Erika Lynn Mazotti , Mark Robert Visokay , William David French , Ricky Alan Jackson , Wai Lee
IPC分类号： H01L49/02 , G01K7/22 , H01L23/522 , H01L27/07 , G01K7/16
摘要： Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.
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10.发明授权公开(公告)号：US10770406B2
公开(公告)日：2020-09-08
申请号：US15820176
申请日：2017-11-21
摘要： An example apparatus includes a semiconductor wafer with a plurality of probe pads each formed centered in scribe streets and intersected by saw kerf lanes. Each probe pad includes a plurality of lower level conductor layers arranged in lower level conductor frames, a plurality of lower level vias extending vertically through lower level insulator layers and electrically coupling the lower level conductor frames; a plurality of upper level conductor layers, each forming two portions on two outer edges of the probe pad, the two portions aligned with, spaced from, and on opposite sides of the saw kerf lane, the coverage of the upper level conductor layers being less than about twenty percent; and a plurality of upper level vias extending vertically through upper level insulator layers and coupling the upper level conductor layers electrically to one another and to the lower level conductor layers. Methods are disclosed.
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