Invention Application
- Patent Title: SYSTEM OF MEASURING IMAGE OF PATTERN IN SCANNING TYPE EUV MASK
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Application No.: US17509454Application Date: 2021-10-25
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Publication No.: US20230131024A1Publication Date: 2023-04-27
- Inventor: Donggun LEE
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G01N21/95 ; G03F7/20

Abstract:
A system of measuring an image of a pattern in a scanning type EUV mask may include a high-power laser output unit including a flat mirror and a spherical mirror, which are used to focus a high-power femto-second laser on a gas cell; a coherent EUV light generating portion generating a coherent EUV light; a pin-hole, a graphene filter, and a zirconium (Zr) filter; a stage; an x-ray spherical mirror configured to focus a coherent EUV light; a zone-plate lens placed between the stage and the x-ray spherical mirror; an x-ray flat mirror placed between the zone-plate lens and the x-ray spherical mirror; an order sorting aperture (OSA) placed on the stage and configured to transmit only a first-order diffraction light of the focused coherent EUV light; and a detector portion placed on the stage.
Public/Granted literature
- US11914282B2 System of measuring image of pattern in scanning type EUV mask Public/Granted day:2024-02-27
Information query