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公开(公告)号：US20240128402A1
公开(公告)日：2024-04-18
申请号：US18241589
申请日：2023-09-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yongmin KWON , Donggun LEE , Punjae CHOI , Youngjin CHOI
CPC classification number: H01L33/08 , H01L33/06 , H01L33/10 , H01L33/382 , H01L33/385
Abstract: A light-emitting device include an emission layer configured to emit white light, and a reflective layer at least partially surrounding side surfaces of the emission layer, where the emission layer includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the first conductivity-type semiconductor layer, a first active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the first active layer configured to emit blue light, and a second active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the second active layer configured to emit yellow light.
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公开(公告)号：US20210408327A1
公开(公告)日：2021-12-30
申请号：US17352708
申请日：2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngjo TAK , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Youngjin CHOI , Yongseok CHOI , Jonghoon HA
Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.
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公开(公告)号：US20210159378A1
公开(公告)日：2021-05-27
申请号：US17036090
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun LEE , Gibum KIM , Joosung KIM , Juhyun KIM , Tan SAKONG , Jonguk SEO , Youngjo TAK
Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.
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公开(公告)号：US20210242370A1
公开(公告)日：2021-08-05
申请号：US17032332
申请日：2020-09-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun LEE , Gibum KIM , Joosung KIM , Jonguk SEO
Abstract: A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.
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5.发明申请APPARATUS GENERATING EXTREME ULTRAVIOLET LIGHT AND EXPOSURE SYSTEM INCLUDING THE SAME 审中-公开产生超极紫外光的装置包括其中的光和曝光系统公开(公告)号：US20170031142A1
公开(公告)日：2017-02-02
申请号：US15183015
申请日：2016-06-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eokbong KIM , Mun Ja KIM , Jongju PARK , Donggun LEE , Byunggook KIM
CPC classification number: G02B19/0095 , G02B5/003 , G02B19/0023 , G03F7/70033 , G03F7/70916 , G21K1/062 , G21K1/10 , H05G2/001
Abstract: An extreme ultraviolet (EUV) light generation apparatus includes a source supplying unit in a chamber, the source supplying unit including a source material for generation of extreme ultraviolet light, a plasma generator to generate plasma from the source material, an optical unit in the chamber, and at least one protection film adjacent to the optical unit, the at least one protection film including at least one of graphite or graphene.
Abstract translation: 一种极紫外（EUV）光产生装置包括：室中的源供给单元，源供给单元，包括用于产生极紫外光的源材料;等离子体发生器，用于从源材料产生等离子体;室中的光学单元; 以及与光学单元相邻的至少一个保护膜，所述至少一个保护膜包括石墨或石墨烯中的至少一个。
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Patent Agency Ranking
公开(公告)号：US20230238485A1
公开(公告)日：2023-07-27
申请号：US17900269
申请日：2022-08-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jonguk SEO , Donggun LEE , Jonghyun LEE , Myunggoo CHEONG , Seungwan CHAE , Youngjo TAK
CPC classification number: H01L33/32 , H01L33/10 , H01L33/382 , H01L33/62
Abstract: A light emitting device includes a first light transmitting layer, a second light transmitting layer provided on the first light transmitting layer, a plurality of mesa structures provided on the second light transmitting layer and configured to generate light in an ultraviolet band, and passivation patterns provided on side surfaces of the plurality of mesa structures. Each of the plurality of mesa structures includes a first epitaxial pattern including an aluminum gallium nitride, a second epitaxial pattern provided on the first epitaxial pattern and including an aluminum gallium nitride, a third epitaxial pattern provided on the second epitaxial pattern and including an aluminum gallium nitride, and a fourth epitaxial pattern provided on the third epitaxial pattern and including a gallium nitride. A horizontal width of each of the plurality of mesa structures is in a range of about 5 μm to about 30 μm.
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公开(公告)号：US20230131024A1
公开(公告)日：2023-04-27
申请号：US17509454
申请日：2021-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun LEE
Abstract: A system of measuring an image of a pattern in a scanning type EUV mask may include a high-power laser output unit including a flat mirror and a spherical mirror, which are used to focus a high-power femto-second laser on a gas cell; a coherent EUV light generating portion generating a coherent EUV light; a pin-hole, a graphene filter, and a zirconium (Zr) filter; a stage; an x-ray spherical mirror configured to focus a coherent EUV light; a zone-plate lens placed between the stage and the x-ray spherical mirror; an x-ray flat mirror placed between the zone-plate lens and the x-ray spherical mirror; an order sorting aperture (OSA) placed on the stage and configured to transmit only a first-order diffraction light of the focused coherent EUV light; and a detector portion placed on the stage.
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公开(公告)号：US20230126613A1
公开(公告)日：2023-04-27
申请号：US17509862
申请日：2021-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun LEE
Abstract: A system of measuring an image of a pattern in a high NA scanning-type extreme ultra-violet (EUV) mask is disclosed. The system may include a light source generating an EUV light; an toroidal mirror; an flat mirror allowing light, which is reflected by the toroidal mirror, to be incident into the mask; an beam splitter; a light detection part; an anamorphic zone-plate lens focusing a transmitted portion of a light emitted from the beam splitter on the mask; a stage; and an anamorphic photo sensor, which is configured to measure an energy of a reflected portion of the coherent EUV light, is composed of a detector array, and has different sizes from each other in horizontal and vertical directions of an incidence surface of the detector array.
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公开(公告)号：US20220140189A1
公开(公告)日：2022-05-05
申请号：US17371286
申请日：2021-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun LEE , Jonguk SEO
Abstract: A nitride semiconductor light emitting device includes: a semiconductor laminate having a first conductivity-type semiconductor layer and a lattice buffer layer in which InGaN layers and GaN layers are alternately stacked, the semiconductor laminate having a columnar body portion protruding through etching of a peripheral region, an insulating layer covering the semiconductor laminate and having an opening at an upper surface of the body portion, and a light emitting structure including a second conductivity-type semiconductor disposed on the upper surface the body portion and selectively grown in the lattice buffer layer to have a side surface inclined with respect to the upper surface of the body portion, an active layer covering the second conductive semiconductor layer, and a third conductivity-type semiconductor layer covering the active layer and contacting the insulating layer.
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公开(公告)号：US20210242369A1
公开(公告)日：2021-08-05
申请号：US17022496
申请日：2020-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngjin CHOI , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Yongseok CHOI , Youngjo TAK , Jonghoon HA
Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.
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