- 专利标题: SEMICONDUCTOR SUBSTRATE CLEANING METHOD, PROCESSED SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND COMPOSITION FOR PEELING
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申请号: US17914016申请日: 2021-03-22
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公开(公告)号: US20230131428A1公开(公告)日: 2023-04-27
- 发明人: Takahisa OKUNO , Masaki YANAI , Takuya FUKUDA , Hiroto OGATA , Shunsuke MORIYA , Hiroshi OGINO , Tetsuya SHINJO
- 申请人: NISSAN CHEMICAL CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: NISSAN CHEMICAL CORPORATION
- 当前专利权人: NISSAN CHEMICAL CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2020-050954 20200323
- 国际申请: PCT/JP2021/011675 WO 20210322
- 主分类号: C11D11/00
- IPC分类号: C11D11/00 ; C11D7/50 ; C11D7/26 ; C09J5/00 ; C09J7/38 ; H01L21/683
摘要:
The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L1 and L2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L1 and that of the alkyl group L2 is 6 or less) in an amount of 80 mass % or more.
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