LAMINATE, METHOD FOR MANUFACTURING LAMINATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

    公开(公告)号:US20240222180A1

    公开(公告)日:2024-07-04

    申请号:US18283987

    申请日:2022-02-21

    Abstract: Provided are a laminate including an adhesive layer that can implement easy peeling when a semiconductor substrate and a support substrate are separated after processing of the semiconductor substrate and can suppress deformation of a bump, and the like.
    A laminate includes a semiconductor substrate with a bump; a support substrate; a protective adhesive layer formed so as to be in contact with the semiconductor substrate with a bump; and a peeling adhesive layer formed between the protective adhesive layer and the support substrate,



    in which the protective adhesive layer is formed of a protective adhesive composition, and the protective adhesive composition contains a component (A) which is cured by a hydrosilylation reaction and does not contain a peeling agent component (B) which does not cause a curing reaction, and
    the peeling adhesive layer is formed of a peeling adhesive composition, and the peeling adhesive composition contains a component (A) which is cured by a hydrosilylation reaction and a peeling agent component (B) which does not cause a curing reaction.

    RESIST UNDERLAYER FILM-FORMING COMPOSITION

    公开(公告)号:US20220334483A1

    公开(公告)日:2022-10-20

    申请号:US17641852

    申请日:2020-10-05

    Abstract: A composition for forming a resist underlayer film exhibits strong etching resistance, has a good dry etching rate ratio and a good optical constant, and is capable of forming a film that provides good coverage over a so-called multilevel substrate and that is flat with reduced difference in thickness after embedding. A resist underlayer film uses said composition for forming a resist underlayer film; and a method for producing a semiconductor device. The composition for forming a resist underlayer film contains: a polymer having the partial structure represented by formula (1); and a solvent. (In the formula, Ar represents an optionally substituted C6-20 aromatic group.)

    RESIST UNDERLYING FILM FORMING COMPOSITION
    9.
    发明申请

    公开(公告)号:US20200209753A1

    公开(公告)日:2020-07-02

    申请号:US16646987

    申请日:2018-09-19

    Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

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