MEMORY CELL WITH COMB-SHAPED ELECTRODES
Abstract:
A structure including a bottom electrode on a substrate, a first side electrode vertically aligned above the bottom electrode, a set of alternating layers of insulator layers and conductive layers horizontally adjacent to the first side electrode, and a resistance switching material layer, the resistance switching material layer horizontally adjacent to a first side of the set of alternating layers. A method including forming a structure, the structure including alternating layers of insulator layers and conductive layers on a substrate, the substrate including a bottom electrode, removing a vertically aligned portion of the alternating layers forming a first trench, forming a first side electrode adjacent to the alternating layers in a portion of the first trench, removing another vertically aligned portion of the alternating layers forming a second trench, and forming a resistance switching material layer in the second trench.
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