Invention Application
- Patent Title: GATE CONTROL CIRCUIT, SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, AND VEHICLE
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Application No.: US18049731Application Date: 2022-10-26
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Publication No.: US20230133872A1Publication Date: 2023-05-04
- Inventor: Toru TAKUMA , Adrian Joita , Shuntaro Takahashi
- Applicant: ROHM Co., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM Co., LTD.
- Current Assignee: ROHM Co., LTD.
- Current Assignee Address: JP Kyoto
- Priority: JP2021-176335 20211028
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/78 ; H02M3/156

Abstract:
Disclosed is a gate control circuit that generates a gate control signal of an output transistor connected between an application end of a power supply voltage and an application end of an output voltage. The gate control circuit includes a first current source connected between the application end of the power supply voltage and the application end of the output voltage, a second current source connected between an application end of a booster voltage and an application end of a reference voltage, the booster voltage being raised to a voltage value higher than the power supply voltage in a steady state, an output stage that uses at least one of the first and second current sources to generate a gate charge current for charging a gate of the output transistor, and a controller that uses at least one of the first and second current sources according to the output voltage.
Public/Granted literature
- US12218124B2 Gate control circuit, semiconductor device, electronic apparatus, and vehicle Public/Granted day:2025-02-04
Information query
IPC分类: