摘要:
Disclosed is a gate control circuit that generates a gate control signal of an output transistor connected between an application end of a power supply voltage and an application end of an output voltage. The gate control circuit includes a first current source connected between the application end of the power supply voltage and the application end of the output voltage, a second current source connected between an application end of a booster voltage and an application end of a reference voltage, the booster voltage being raised to a voltage value higher than the power supply voltage in a steady state, an output stage that uses at least one of the first and second current sources to generate a gate charge current for charging a gate of the output transistor, and a controller that uses at least one of the first and second current sources according to the output voltage.
摘要:
A switching device has, for example, a first terminal configured to be connected to an application node for a first voltage, a second terminal configured to be connected to the first end of a load, a third terminal configured to be connected to the second end of the load and to an application node for a second voltage, a switching element configured to be connected between the first and second terminals, a first active clamper configured to limit the output voltage at the second terminal with reference to the first voltage in a first state, and a second active clamper configured to limit the output voltage with reference to the second voltage in a second state different from the first state.
摘要:
This switch drive circuit drives a switch element. The switch drive circuit is provided with a signal input terminal, a disconnect circuit and a connect circuit. A control signal is input into the signal input terminal. The disconnect circuit includes a first switch which switches connection/disconnection of a line connecting the signal input terminal to a control terminal of the switch element, and when the switch element is to be turned off, the disconnect circuit performs a disconnection operation to disconnect the line using the first switch. The connect circuit includes a second switch which switches connection/disconnection between a certain point on the line, positioned on the control terminal side of the first switch, and a reference potential point, and when the switch element is to be turned off, the connect circuit performs a connection operation to connect the certain point to the reference potential point using the second switch.
摘要:
Disclosed herein is a clamper including a current source that is connected between an external electrode and an internal node and generates a predetermined constant current, a diode having an anode connected to the internal node, and a current mirror that generates a second current corresponding to a first current flowing via the diode and draws the second current from the internal node to a reference voltage node.
摘要:
In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (∝ Iref) and a second set value (∝ Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (∝ Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.
摘要:
An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.
摘要:
An overheat protection circuit has an NPN transistor, a power terminal to which a supply voltage is applied, a transmission path by which the supply voltage is transmitted from the power terminal to the collector of the NPN transistor without passing through a current source, and an output voltage generator that generates an output voltage commensurate with the base-emitter voltage of the NPN transistor.
摘要:
Disclosed is a switch device including a first terminal, a second terminal, a third terminal, a switch element disposed between the first terminal and the second terminal, a control line that reaches a control end of the switch element from the third terminal, a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal, at least one second circuit block, each second circuit block being connected to a corresponding one of branch power supply lines that branch from the control line, a first resistor disposed between the third terminal and the first circuit block, and at least one second resistor, each second resistor being disposed on a corresponding one of the branch power supply lines.
摘要:
A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.
摘要:
An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.