Invention Application
- Patent Title: SEMICONDUCTOR POWER DEVICE WITH SHORT CIRCUIT PROTECTION AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR POWER DEVICE
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Application No.: US18045784Application Date: 2022-10-11
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Publication No.: US20230134850A1Publication Date: 2023-05-04
- Inventor: Salvatore CASCINO , Alfio GUARNERA , Mario Giuseppe SAGGIO
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Priority: IT102021000027842 20211029
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L21/04

Abstract:
A semiconductor power device has a maximum nominal voltage and includes: a first conduction terminal and a second conduction terminal; a semiconductor body, containing silicon carbide and having a first conductivity type; body wells having a second conductivity type, housed in the semiconductor body and separated from one another by a body distance; source regions housed in the body wells; and floating pockets having the second conductivity type, formed in the semiconductor body at a distance from the body wells between a first face and a second face of the semiconductor body. The floating pockets are shaped and arranged relative to the body wells so that a maximum intensity of electrical field around the floating pockets is greater than a maximum intensity of electrical field around the body wells at least for values of a conduction voltage between the first conduction terminal and the second conduction terminal greater than a threshold voltage, the threshold voltage being less than the maximum nominal voltage.
Information query
IPC分类: