Invention Application
- Patent Title: METHOD FOR FABRICATING FIN STRUCTURE FOR FIN FIELD EFFECT TRANSISTOR
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Application No.: US18090510Application Date: 2022-12-29
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Publication No.: US20230135072A1Publication Date: 2023-05-04
- Inventor: Hao Che Feng , Hung Jen Huang , Hsin Min Han , Shih-Wei Su , Ming Shu Chiu , Pi-Hung Chuang , Wei-Hao Huang , Shao-Wei Wang , Ping Wei Huang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L21/02 ; H01L29/66 ; H01L21/3105 ; H01L21/311

Abstract:
The invention provides a method for fabricating a fin structure for fin field effect transistor, including following steps. Providing a substrate, including a fin structure having a silicon fin and a single mask layer just on a top of the silicon fin, the single mask layer being as a top portion of the fin structure. Forming a stress buffer layer on the substrate and conformally covering over the fin structure. Performing a nitridation treatment on the stress buffer layer to have a nitride portion. Perform a flowable deposition process to form a flowable dielectric layer to cover over the fin structures. Annealing the flowable dielectric layer. Polishing the flowable dielectric layer, wherein the nitride portion of the stress buffer layer is used as a polishing stop.
Public/Granted literature
- US11862727B2 Method for fabricating fin structure for fin field effect transistor Public/Granted day:2024-01-02
Information query
IPC分类: