A sputtering target includes a gallium nitride-based crystalline body composed of a plurality of gallium nitride-based monocrystalline grains whose c-axes are orientated in a direction normal to a predetermined surface. The gallium nitride-based crystalline body has a total oxygen concentration of 150 mass ppm or lower, and the gallium nitride-based monocrystalline grains have oxygen concentrations of 2×1017 cm−3 or higher measured by dynamic SIMS method.