公开(公告)号：US20240344238A1

公开(公告)日：2024-10-17

申请号：US18752892

申请日：2024-06-25

Applicant: NGK INSULATORS, LTD.

Inventor： Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Kentaro NONAKA

IPC: C30B29/40 ,  C30B25/02

CPC classification number: C30B29/406 ,  C30B25/02

Abstract: A Group-III element nitride substrate includes a first main surface and a second main surface facing each other, wherein, in the first main surface, crystallinity of a first part positioned on a central portion thereof is higher than crystallinity of a second part positioned outside the first part.

公开(公告)号：US20240392474A1

公开(公告)日：2024-11-28

申请号：US18796750

申请日：2024-08-07

Applicant: NGK INSULATORS, LTD.

Inventor： Kentaro NONAKA ,  Takahiro TAMURA ,  Yoshitaka KURAOKA

IPC: C30B29/40 ,  C30B25/18

Abstract: An object is to maintain excellent property of an epitaxial growth layer, even when the epitaxial growth layer on a group 13 nitride single crystal substrate in thinned. A group 13 nitride single crystal substrate is composed of a group 13 nitride single crystal and has a first main face and a second main face. The group 13 nitride single crystal substrate 2 contains zinc as a dopant, and the first main face has an off-angle of 0.4° or more and 1.0° or less.

公开(公告)号：US20230246132A1

公开(公告)日：2023-08-03

申请号：US18180531

申请日：2023-03-08

Applicant: NGK Insulators, Ltd.

Inventor： Kentaro NONAKA ,  Takayuki HIRAO ,  Katsuhiro IMAI

IPC: H01L33/32 ,  H01L33/02

CPC classification number: H01L33/32 ,  H01L33/025

Abstract: There is provided a large-diameter Group-III element nitride semiconductor substrate including a first surface and a second surface, in which, despite its large diameter, variations in quality in the first surface are suppressed. A Group-III element nitride semiconductor includes: a first surface; and a second surface, wherein the Group-III element nitride semiconductor substrate has a diameter of 100 mm or more, and wherein the Group-III element nitride semiconductor substrate has a coefficient of variation of a yellow luminescence intensity in a range corresponding to 88% or more of an entire region of the first surface of 0.3 or less based on a photoluminescence spectrum obtained through photoluminescence measurement of a range of the entire region of the first surface.

公开(公告)号：US20240401238A1

公开(公告)日：2024-12-05

申请号：US18797959

申请日：2024-08-08

Applicant: NGK INSULATORS, LTD.

Inventor： Kentaro NONAKA ,  Takahiro TAMURA ,  Sota MAEHARA ,  Yoshitaka KURAOKA

IPC: C30B29/68 ,  C30B19/02 ,  C30B29/40 ,  H01L29/20 ,  H01L29/205

Abstract: A laminate includes a group 13 nitride single crystal substrate composed of a group 13 nitride single crystal and having a first main face and a second main face, a buffer layer provided on the first main face of the group 13 nitride single crystal substrate, a channel layer provided on the buffer layer and a barrier layer provided on the channel layer. The channel layer has a thickness of 700 nm or smaller, and the first main face of the group 13 nitride single crystal substrate has an off-angle of 0.4° or more and 1.0° or less.

公开(公告)号：US20230250555A1

公开(公告)日：2023-08-10

申请号：US18300774

申请日：2023-04-14

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshitaka KURAOKA ,  Kentaro NONAKA

IPC: C30B29/38 ,  C30B23/02 ,  C30B19/04

CPC classification number: C30B29/38 ,  C30B19/04 ,  C30B23/02

Abstract: It is provided a method of growing a group 13 nitride crystal layer, on an underlying substrate including a seed crystal layer composed of a group 13 nitride. The underlying substrate is immersed in a melt containing a flux to grow a group 13 nitride crystal layer two-dimensionally on a nitrogen polar surface of the seed crystal layer by flux method.

公开(公告)号：US20240347604A1

公开(公告)日：2024-10-17

申请号：US18754464

申请日：2024-06-26

Applicant: NGK INSULATORS, LTD.

Inventor： Kentaro NONAKA ,  Sota MAEHARA ,  Yoshitaka KURAOKA ,  Katsuhiro IMAI

IPC: H01L29/20 ,  H01L21/02 ,  H01L21/66 ,  H01L29/207

CPC classification number: H01L29/2003 ,  H01L21/02362 ,  H01L22/26 ,  H01L29/207

Abstract: A Group-III element nitride semiconductor substrate includes a first surface and a second surface. A minimum value of a specific resistance in the first surface is 1×107 Ω·cm or more, and the minimum value of the specific resistance in the first surface is 0.01 or more times as large as a maximum value of the specific resistance in the first surface.

公开(公告)号：US20240002997A1

公开(公告)日：2024-01-04

申请号：US18465265

申请日：2023-09-12

Applicant: NGK INSULATORS, LTD.

Inventor： Kentaro NONAKA ,  Yoshinori ISODA ,  Katsuhiro IMAI

IPC: C23C14/34

CPC classification number: C23C14/3407

Abstract: A sputtering target includes a gallium nitride-based crystalline body composed of a plurality of gallium nitride-based monocrystalline grains whose c-axes are orientated in a direction normal to a predetermined surface. The gallium nitride-based crystalline body has a total oxygen concentration of 150 mass ppm or lower, and the gallium nitride-based monocrystalline grains have oxygen concentrations of 2×1017 cm−3 or higher measured by dynamic SIMS method.