Invention Publication
- Patent Title: DEPOSITION APPARATUS, DEPOSITION TARGET STRUCTURE, AND METHOD
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Application No.: US18472556Application Date: 2023-09-22
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Publication No.: US20240014019A1Publication Date: 2024-01-11
- Inventor: Chia-Hsi WANG , Yen-Yu CHEN
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34

Abstract:
A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.
Public/Granted literature
- US12237159B2 Deposition apparatus, deposition target structure, and method Public/Granted day:2025-02-25
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