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    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210305047A1

    公开(公告)日：2021-09-30

    申请号：US17150356

    申请日：2021-01-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jia-Lin WEI ,  Ming-Hui WENG ,  Chih-Cheng LIU ,  Yi-Chen KUO ,  Yen-Yu CHEN ,  Yahru CHENG ,  Jr-Hung LI ,  Ching-Yu CHANG ,  Tze-Liang LEE ,  Chi-Ming YANG

    IPC: H01L21/033 ,  H01L21/308 ,  G03F1/22 ,  G03F7/20

    Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

    GATE STRUCTURES FOR SEMICONDUCTOR DEVICES
    6.
    发明申请
    GATE STRUCTURES FOR SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20210134951A1

    公开(公告)日：2021-05-06

    申请号：US16835916

    申请日：2020-03-31

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen-Yu CHEN ,  Chung-Liang Cheng

    IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L27/088 ,  H01L29/51 ,  H01L21/8234

    Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes first and second pair of source/drain regions disposed on a substrate, first and second nanostructured channel regions, and first and second gate structures with effective work function values different from each other. The first and second gate structures include first and second high-K gate dielectric layers, first and second barrier metal layers with thicknesses different from each, first and second work function metal (WFM) oxide layers with thicknesses substantially equal to each other disposed on the first and second barrier metal layers, respectively, a first dipole layer disposed between the first WFM oxide layer and the first barrier metal layer, and a second dipole layer disposed between the second WFM oxide layer and the second barrier metal layer.

    INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME
    9.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20190067188A1

    公开(公告)日：2019-02-28

    申请号：US16058290

    申请日：2018-08-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chung-Liang CHENG ,  Shih Wei BIH ,  Yen-Yu CHEN

    IPC: H01L23/522 ,  H01L21/768

    Abstract: A semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.

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