发明公开
- 专利标题： SUBSTRATE INTEGRATED THIN FILM CAPACITORS USING AMORPHOUS HIGH-K DIELECTRICS
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申请号： US18372533申请日： 2023-09-25
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公开(公告)号： US20240014149A1公开(公告)日： 2024-01-11
- 发明人: Aleksandar ALEKSOV , Thomas SOUNART , Kristof DARMAWIKARTA , Henning BRAUNISCH , Prithwish CHATTERJEE , Andrew J. BROWN
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L23/64
- IPC分类号： H01L23/64 ; H01L23/498 ; H01L23/00 ; H01L21/48
摘要：
Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.
信息查询
IPC分类:
