Invention Publication
- Patent Title: SUBSTRATE INTEGRATED THIN FILM CAPACITORS USING AMORPHOUS HIGH-K DIELECTRICS
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Application No.: US18372533Application Date: 2023-09-25
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Publication No.: US20240014149A1Publication Date: 2024-01-11
- Inventor: Aleksandar ALEKSOV , Thomas SOUNART , Kristof DARMAWIKARTA , Henning BRAUNISCH , Prithwish CHATTERJEE , Andrew J. BROWN
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L23/498 ; H01L23/00 ; H01L21/48
Abstract:
Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.
Information query
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