A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protection layer and the second protection layer are located on the sidewall of the MTJ stack. The first protection layer is located between the second protection layer and the MTJ stack. There is a notch between the second protection layer and the SOT layer.