- 专利标题： WRITE DUTY CYCLE CALIBRATION ON A MEMORY DEVICE
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申请号： US18225878申请日： 2023-07-25
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公开(公告)号： US20240046976A1公开(公告)日： 2024-02-08
- 发明人: Luigi Pilolli , Guan Wang , Rosario D’Esposito , Andrew Proescholdt , Lucia Botticchio , Luca Di Loreto
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： G11C11/4076
- IPC分类号： G11C11/4076 ; G11C11/4099 ; G11C11/4096
摘要：
Operations include generating a voltage level associated with a digital signal corresponding to a write operation associated with one or more memory cells of a memory device, comparing the voltage level to a reference voltage level to generate a comparison result, generating based on the comparison result, a command to adjust a duty cycle associated with the digital signal; and adjusting the duty cycle associated with digital signal based on the command.
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