公开(公告)号：US20240046976A1

公开(公告)日：2024-02-08

申请号：US18225878

申请日：2023-07-25

Applicant: Micron Technology, Inc.

Inventor： Luigi Pilolli ,  Guan Wang ,  Rosario D’Esposito ,  Andrew Proescholdt ,  Lucia Botticchio ,  Luca Di Loreto

IPC: G11C11/4076 ,  G11C11/4099 ,  G11C11/4096

CPC classification number: G11C11/4076 ,  G11C11/4099 ,  G11C11/4096 ,  G11C2207/2254

Abstract: Operations include generating a voltage level associated with a digital signal corresponding to a write operation associated with one or more memory cells of a memory device, comparing the voltage level to a reference voltage level to generate a comparison result, generating based on the comparison result, a command to adjust a duty cycle associated with the digital signal; and adjusting the duty cycle associated with digital signal based on the command.