Invention Publication
- Patent Title: HIGH CONDUCTANCE DIVERT LINE ARCHITECTURE
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Application No.: US17880885Application Date: 2022-08-04
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Publication No.: US20240047232A1Publication Date: 2024-02-08
- Inventor: Abhijit A. Kangude , Elizabeth Neville , Arun Chakravarthy Chakravarthy
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/67
- IPC: H01L21/67

Abstract:
Exemplary semiconductor processing systems may include a lid plate and a gas splitter. The gas splitter may be seated on the lid plate. The gas splitter may include a top surface and a plurality of side surfaces. The gas splitter may define a gas inlet, a gas outlet, a gas lumen that extends between and fluidly couples the gas inlet with the gas outlet, and a first divert lumen that is fluidly coupled with the gas lumen and that directs gases away from a processing chamber through a divert outlet. The semiconductor processing system may include a first divert weldment. The first divert weldment may extend from and fluidly couple to the divert outlet. The first divert weldment may include a first divert weldment outlet and a second divert weldment outlet.
Information query
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