A plasma processing apparatus including a processing chamber; a wafer stage on which a processing target wafer is placed; an electrostatic chuck including a film-shaped electrostatic attraction electrode which is disposed in a dielectric film covering an upper surface of the wafer stage; a radio frequency electrode which is disposed inside the wafer stage; and a lift pin which is disposed inside the wafer stage and which moves the wafer up and down by movement thereof, a lower portion of the lift pin being connected to a member made of a conductor, in which a voltage value Eps of the lower portion of the lift pin and an average value Eesc of the potential of the electrostatic attraction electrode are adjusted during the processing of the wafer so as to match the predicted value Vdcs of the self-bias voltage of the wafer.