公开(公告)号：US11664233B2

公开(公告)日：2023-05-30

申请号：US17386892

申请日：2021-07-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Tomoyuki Tamura ,  Kazuyuki Ikenaga

IPC: H01L21/3065 ,  H01L21/32 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/6833

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

公开(公告)号：US20230101039A1

公开(公告)日：2023-03-30

申请号：US16979671

申请日：2019-12-23

Applicant: Hitachi High-Tech Corporation

Inventor： Kazuhiro Ueda ,  Masaru Kurihara ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: C23C16/44 ,  C23C4/134 ,  G01N23/20 ,  H01J37/32 ,  H01L21/3065

Abstract: Provided is a manufacturing method of an interior member of a plasma processing apparatus, which improves processing yield. The interior member is disposed inside a processing chamber of the plasma processing apparatus and includes, on a surface thereof, a film of a material having resistance to plasma. The manufacturing method includes: a step of moving a gun by a predetermined distance along the surface of the interior member to spray the material to form the film, and disposing a test piece having a surface having a shape simulating a surface shape of the interior member within a range of the distance within which the gun is moved and forming the film of the material on the surface of the test piece; and a step of adjusting, based on a result of detecting a crystal size of the film on the surface of the test piece and presence or absence of a residual stress or inclusion of a contaminant element, a condition of forming the film on the surface of the interior member by the gun.

公开(公告)号：US20220139678A1

公开(公告)日：2022-05-05

申请号：US17574081

申请日：2022-01-12

Applicant: Hitachi High-Tech Corporation

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

公开(公告)号：US20240047258A1

公开(公告)日：2024-02-08

申请号：US17642821

申请日：2021-02-25

Applicant: Hitachi High-Tech Corporation

Inventor： Tomoyuki Tamura ,  Kazuyuki Ikenaga

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/68742 ,  H01J37/32477 ,  H01L21/67063

Abstract: A plasma processing apparatus including a processing chamber; a wafer stage on which a processing target wafer is placed; an electrostatic chuck including a film-shaped electrostatic attraction electrode which is disposed in a dielectric film covering an upper surface of the wafer stage; a radio frequency electrode which is disposed inside the wafer stage; and a lift pin which is disposed inside the wafer stage and which moves the wafer up and down by movement thereof, a lower portion of the lift pin being connected to a member made of a conductor, in which a voltage value Eps of the lower portion of the lift pin and an average value Eesc of the potential of the electrostatic attraction electrode are adjusted during the processing of the wafer so as to match the predicted value Vdcs of the self-bias voltage of the wafer.

公开(公告)号：US11257661B2

公开(公告)日：2022-02-22

申请号：US14788759

申请日：2015-06-30

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

公开(公告)号：US12112925B2

公开(公告)日：2024-10-08

申请号：US17574081

申请日：2022-01-12

Applicant: Hitachi High-Tech Corporation

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32706 ,  H01J37/32935 ,  H01J37/3299

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

公开(公告)号：US11987880B2

公开(公告)日：2024-05-21

申请号：US16979671

申请日：2019-12-23

Applicant: Hitachi High-Tech Corporation

Inventor： Kazuhiro Ueda ,  Masaru Kurihara ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: C23C16/44 ,  C23C4/134 ,  G01N23/20 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23C16/4404 ,  C23C4/134 ,  G01N23/20 ,  H01J37/32495 ,  H01L21/3065 ,  H01J2237/332 ,  H01J2237/334

Abstract: Provided is a manufacturing method of an interior member of a plasma processing apparatus, which improves processing yield. The interior member is disposed inside a processing chamber of the plasma processing apparatus and includes, on a surface thereof, a film of a material having resistance to plasma. The manufacturing method includes: a step of moving a gun by a predetermined distance along the surface of the interior member to spray the material to form the film, and disposing a test piece having a surface having a shape simulating a surface shape of the interior member within a range of the distance within which the gun is moved and forming the film of the material on the surface of the test piece; and a step of adjusting, based on a result of detecting a crystal size of the film on the surface of the test piece and presence or absence of a residual stress or inclusion of a contaminant element, a condition of forming the film on the surface of the interior member by the gun.