Invention Publication
- Patent Title: INTEGRATED CIRCUIT DEVICE
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Application No.: US18106540Application Date: 2023-02-07
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Publication No.: US20240047339A1Publication Date: 2024-02-08
- Inventor: SEUNGMIN CHA , SEUNGMIN SONG , YOUNGWOO KIM , JINKYU KIM , SORA YOU , NAMHYUN LEE , SUNGMOON LEE
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Priority: KR 20220096269 2022.08.02
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L27/092 ; H01L29/423 ; H01L23/535 ; H01L23/522 ; H01L23/528

Abstract:
An integrated circuit device includes a substrate, having a front surface and a rear surface opposite to each other, and a fin-type active region defined by a trench in the front surface, a device separation layer filling the trench, a source/drain region on the fin-type active region, a first conductive plug arranged on the source/drain region and electrically connected to the source/drain region, a power wiring line at least partially arranged on a lower surface of the substrate, a buried rail connected to the power wiring line through the device separation layer and decreasing in horizontal width toward the power wiring line, and a power via connecting the buried rail to the first conductive plug.
Information query
IPC分类: