发明公开
- 专利标题: SEMICONDUCTOR STRUCTURE
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申请号: US17818003申请日: 2022-08-08
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公开(公告)号: US20240047395A1公开(公告)日: 2024-02-08
- 发明人: Sheng-Fu HUANG , Shing-Yih SHIH
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei City
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei City
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L25/065
摘要:
A semiconductor structure includes a first chip and a second chip bonded to the first chip. The first chip includes a first semiconductor substrate, a first multi-level interconnect structure over the first semiconductor substrate, a first redistribution layer (RDL) over a conductive line of the first multi-level interconnect structure, a compact layer over the first RDL and the first multi-level interconnect structure, a cap layer over the compact layer, and a metal pad on the first RDL. The second chip includes a second semiconductor substrate, a second multi-level interconnect structure over the second semiconductor substrate, and conductive structure extending from the second multi-level interconnect structure to the metal pad.
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